• 0471-2471601

    24x7 phone assistance

  • Fast Delivery

    All product safe

Member Login

Welcome back, friend. Login to get started

Member Register


Add a Review

Image Alternative text Image Alternative text Image Alternative text

IRF540 N-Channel MOSFET

24

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

  • Drain to Source Voltage (Vds) :100 V Voltage Rating (DC) 100 V
  • Voltage Rating (DC) :100 V
  • Rise Time 35 ns
  • Mounting Type :Through Hole

Benefits:

  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature

Target Applications:

  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Related Products

Image Alternative text
IC 4047
  • 16
  • 18
Image Alternative text
ERL TWO CHANNEL 12V RELAY BOARD MODULE
  • 112
  • 112
Image Alternative text
IC AT89c51
  • 50
  • 50
Image Alternative text
Differential Drive Robotic Platform Robot Chassis Kit
  • 1699
  • 1888
Image Alternative text
XL6009 DC- DC Step UP Boost Power Converter Module Adjustable Output
  • 100
  • 100
Image Alternative text
8 channel level converter RED
  • 100
  • 111