• 0471-2471601

    24x7 phone assistance

  • Fast Delivery

    All product safe

Member Login

Welcome back, friend. Login to get started

Member Register


Add a Review

Image Alternative text Image Alternative text Image Alternative text

IRF540 N-Channel MOSFET

24

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

  • Drain to Source Voltage (Vds) :100 V Voltage Rating (DC) 100 V
  • Voltage Rating (DC) :100 V
  • Rise Time 35 ns
  • Mounting Type :Through Hole

Benefits:

  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature

Target Applications:

  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Related Products

Image Alternative text
LCD Breakout Boards -4 BIt
  • 65
  • 65
Image Alternative text
ATTINY13A
  • 45
  • 45
Image Alternative text
Raindrop Detection Sensor Module
  • 72
  • 72
Image Alternative text
MFRC-522 RC522 RFID RF IC card reader sensor
  • 197
  • 197
Image Alternative text
Ic 7812 Voltage Regulator(5 pcs)
  • 6
  • 6
Image Alternative text
INTEL GALILEO2.P INTEL GALILEO GEN 2 DEVELOPMENT BOARD
  • 5999
  • 5999