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IRF540 N-Channel MOSFET

23

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

  • Drain to Source Voltage (Vds) :100 V Voltage Rating (DC) 100 V
  • Voltage Rating (DC) :100 V
  • Rise Time 35 ns
  • Mounting Type :Through Hole

Benefits:

  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature

Target Applications:

  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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